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| SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2676 ( F10W90HVX2 ) 900V 10A FEATURES Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings Tc = 25 Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentDC IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC PT Total Power Dissipation IAR Repetitive Avalanche Current EAS Single Avalanche Energy EAR Repetitive Avalanche Energy TOR Mounting Torque Conditions Ratings -55150 150 900 30 10 20 10 120 10 260 26 0.8 Unit V Pulse width10s, Duty cycle1/100 A W A mJ Nm Tch = 150 Tch = 25 Tch = 25 Recommended torque 0.5 Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff 2SK2676 ( F10W90HVX2 ) Conditions Min. 900 Typ. Max. 250 0.1 4.8 2.5 8.0 1.05 3.0 Unit V A S V ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID =5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 10A VDS = 25V, VGS = 0V, f = 1MHZ ID = 5A, RL = 30, VGS = 10V 90 2150 50 210 140 440 1.4 3.5 1.5 1.04 / nC pF 250 740 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2676 20 Tc = -55C Transfer Characteristics 25C 15 Drain Current ID [A] 100C 10 150C 5 VDS = 25V TYP 0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2676 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 5.0A 1 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2676 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2676 100 Safe Operating Area 10 100s 200s 1 R DS(ON) limit Drain Current ID [A] 1ms 10ms DC 0.1 Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2676 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Time t [s] 2SK2676 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2676 10000 Capacitance Ciss 1000 Capacitance Ciss Coss Crss [pF] Coss 100 Crss 10 f=1MHz Ta=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2676 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V 0V Rg = 35 IAS = 10A 10 Single Avalanche Current IAS [A] EAR = 26mJ EAS = 260mJ 1 0.1 1 10 100 Inductance L [mH] 2SK2676 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2676 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] 15 VGS VDD = 400V 300 200V 100V 200 10 5 100 ID = 10A TYP 0 0 50 100 0 150 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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